Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

In 2 O 3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the metal/oxide/semiconductor (MOS) structures (Si/In Er/In-contact) measured for n and p type conductivity described within model of majority carrier thermoemission barrier, with bias voltage correction to potential drop. electron hole injection barriers between substrate film found be 0.14 0.3 eV, respectively, measuring temperature dependence forward current at a low sub-barrier bias. resulting barrier is accounted presence defect state density spreading from valence band edge into gap form conduction channel. in confirmed photoluminescence data respective energy range 1.55–3.0 eV. structure Si/In heterojunction has analyzed. electrons channel holes estimated 1.56